Uv photodiode

They exhibit low dark current and can be reverse biased for lower capacitance and faster rise time performance. Silicon Carbide UV Photodiodes. These SiC detectors can be permanently operated at up to 170°C . This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar rejection filters.

Detection of radiation occurs in the wavelength range from 2nm to 4nm.

UV photodiodes are produced from the material SiC.

Detectors are available with filters that are exclusively sensitive in the UV-C, UV-B, or UV-A ranges.

Our photodetectors feature sensors that enable properties such as intensity, power, intensity distribution, wavefront shape , energy, and wavelength to be measured. We offer unmounted photodiodes as well as . The FGAP7 a GaP photodiode , is useful for detection of UV light sources from 1to 5nm. Our SiC products are made and packaged in Germany by our partner, sglux GmbH. SiC photodiodes from sglux have the best aging properties under powerful Hg- lamp irradiation. They have high shunt resistance, low noise and high breakdown voltages.

GenUV is the total solution specialist for UV detection technology. Their products are based on Gallium Nitride (GaN), Indium Gallium Nitride (InGaN) and Aluminum Gallium Nitride (AlGaN). These products are summarized in their How to Select UV . They also feature high-speed response, high sensitivity and low noise. An overview at the portfolio that ranges from 0. UVC or UV-Index spectral response p. Tutorial to answer beginners and users questions . Our range of photodiodes for the UV -, Vis- and NIR-region made from siliconcarbide (SiC) or silicon detector material.

BrandOSRAM Opto Semiconductors. Photodiodes are similar to regular semiconductor diodes except that they may be either exposed (to detect vacuum UV or X-rays) or . For monochromatic light detection. For VUV (vacuum ultraviolet ) detection.

Infrared sensitivity enhanced type. Si PIN photodiodes delivering high-speed response when operated with . The devices operate from the deep UV to the near-infrared wavelengths. Electron , Photon, X-Ray Detectors (AXUV).

Visible (Blue and Red Enhanced Detectors) Opto Diode offers . OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion channel series and planar diffused series.

Planar diffused structure ( UV -D Series) UV enhanced photodiodes . These devices exhibit linearity of photocurrent up to higher light input power compared to inversion layer devices. They offer better stability with . On the other han the photodiodes and LEDs based on . It is ideal for extreme low-level light (LLL) detection and photon counting.