Monday 22 October 2018

Photodetector definition

Photosensors or photodetectors are sensors of light or other electromagnetic energy. The absorbed photons make electron–hole pairs in the depletion region. The current is generated when photons are absorbed in the photodiode.


Photodiodes may contain optical filters, built-in lenses, and may have large or small surface areas. Define photodetector : any of various devices for detecting and measuring the intensity of radiant energy through photoelectric action.

Unabridged Based on the Random House Dictionary, .

English dictionary definition of photodetector.

PD): A transducer capable of accepting an optical signal and producing an electrical signal containing the same information as in the optical signal. Note: The two main types of semiconductor photodetectors are the photodiode (PD) and the avalanche photodiode (APD). PC Magazine Tech Encyclopedia Index - Definitions on common technical and computer related terms.


Responsivity varies with wavelength. Rise Time (Tr): The time required for the photodetector output level to change from to of the peak output . Common-Mode Rejection Ratio (CMRR). In our balanced photoreceivers, CMRR tells you how much noise rejection you can get by using the photoreceiver.


Any device used to detect electromagnetic radiation. Though the active device structure of the RCE detectors remains close to other conventional photodetectors , the effect of . Quantum Efficiency Calculation. The experimental development of the optical maser and later laser at that time had made the classical concept of optical coherence inadequate.


PHOTODIODE meaning - PHOTODIODE pronunciation - PHOTODIODE definition - PHOTODIODE explanation - How to pronou. This technical approach has some advantages over p-n diodes. Ask RP Photonics for advice on photodiodes, e. Photodiodes are frequently used photodetectors , which have largely replaced the formerly used phototubes. The high photodetector performance of the graphene p–n vertical diodes can be understood by the high photocurrent gain and the carrier multiplication arising from impact ionization in. Sometimes it is also called as photo-detector , a light detector, and photo-sensor.


These diodes are particularly designed to work in reverse bias condition, it means that the P-side of the photodiode is associated with the negative . It is also sometimes referred as photo-detector , photo-sensor, or light detector. To form an ohmic contact another impurity diffusion into the backside of the wafer is necessary. The impurity is an N-type for P-type active area and P-type for an N-type active area. The contact pads are deposited on the front active area on defined areas, and on the backside .

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