Wednesday 1 April 2015

Ingaasp refractive index

Weber, “Optimization of the Carrier-Induced Effective Index Change in InGaAsP Waveguide-Applications to Tunable Bragg Filters,” J. A method for calculation of refractive indices in III–V compounds at energies below the direct band edge is presented. Spectral dependence of the refractive‐ index data is analyzed on the basis of simplified models of the interband transitions. The refractive index of the quaternary InGaAsP lattice matched to InP at energies below the fundamental absorption is presented. It is given in terms of basic material .

The dependence of the refractive index on material composition and light wavelength has been investigated for near‐lattice‐ matched samples and .

Determination of the Refractive Index of InGaAsP.

Epitaxial Layers by Mode Line Luminescence. Abstract-A new method of detecting optical waveguide modes of. Extrapolation schemes for the calculation of InGaAsP ma- terial parameters are described. Experimental data on alloy composition, bandgap, lattice parameter and refrac- tive index are presented and compared with calculated values. Therefore, semiconductors for these wavelengths are of prime interest.


Refractive index steps between InGaAsP and InP were found to vary significantly with . Particularly promising for suitable light sources and detectors is the alloy system InGaAsP with compositions lattice-matched to. A knowledge of the optical absorption coefficient OL and the refractive index n, measured . Fermi level separation or carrier temper- ature. We have measured these parameters for MQW InGaAsP lasers.


Using this data, we estimated the rate of the temperature increase with current above threshold in these devices, which is. Free online database of refractive index values, with material optical constants listed versus wavelength for Thin Film Thickness Measurement. The modulation of the real part of the refractive index with an electric field is known as electrorefraction.


Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP. This article has been downloaded from IOPscience. Please scroll down to see the full text article. Download details: IP Address: . In addition to changes in absorption, the QCSE also modifies the refractive index spectrum of the quantum well material.


The changes in refraction ∆n and absorption ∆α are related through the Kramers-Kronig expressions. The clarify the complicated behavior . Unfortunately, the low refractive index of. Owing to the large electron-induced refractive index change in InGaAsP , we have successfully demonstrated extremely high modulation efficiency of approximately 0.

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